A technical guide to silicon photomultipliers (MPPC
2020-8-6 · σ D e t e c t o r J i t t e r ∝ 1 N p h o t o n × P D E This relationship provides a highly effective tool in preliminary technical considerations, but one must understand its limitation: it is only applicable to timing at point of charge generation and excludes any variability in delays that might be present in charge collection and readout.
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Silicon Carbide (SiC) has electronic and physical properties that offers superior performance devices for high power appliions.It is also used as a substrate to grow high quality Gallium Nitride (GaN) enabling fast swtiching, high power RF devices. SiC may be
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Growth and Structure of Microcrystalline Silicon …
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Measurements of residual stresses in the Parylene C …
2013-8-1 · As shown in figure 5, when ΔT = 48 °C (i.e. T = 73 °C) is adopted in equation , good fitting is obtained. Using equations (1a) and (1b), the predicted stress distributions are plotted in figures 6(a) and (b). The stress is linear through the thickness in each layer and discontinuous at the interface between Si and Parylene C.
Influence of the alloying on the vibrational properties …
2019-1-30 · Raman spectra of a large variety of amorphous silicon–carbon films prepared by magnetron sputtering at different technological conditions are studied. Great emphasis is given to the bands in the region 200–450 cm −1.The position of the well‐defined dip between the bending mode band and the bands in the central region is used as a quantitative measure of the position of the bands in the
A technical guide to silicon photomultipliers (MPPC
2018-1-11 · Thus, we can formulate the APD’s Geiger-mode gain as: M = C j × V b i a s-V B R q e l e c t r o n. In a typical APD, depending on its surface area, the junction capacitance C j is on the order of several 10 to a few 100 pF while q e l e c t r o n is 1.6 ×10-19 C.
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Performance optimization of a passive silicon-based micro
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