Report: Enhancing the efficiency of induction heating
Report: Enhancing the efficiency of induction heating plants through Silicon Carbide MOSFETs. 24.06.2015; Selected Reports; Frequency converters are power electronic devices or systems that convert electric energy with given parameters (voltage, frequency, nuer of phases) into electric energy with different parameters.
Improving System PerformanceDCDC Appliions
GaN technology, in its early stages, already outperforms the theoretical limits of MOSFETs in the metric of specific on resistance for a given breakdown voltage, as shown in figure 1. Figure 1: Theoretical and current eGaN FET on-resistance vs. blocking voltage capability for silicon, silicon-carbide, and gallium nitride devices . II.
Gallium Nitride (GaN) - Infineon Technologies
2 · Gallium nitride (GaN) offers fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching.
Properties Of Silicon Carbide.pdf | Mosfet | Thermal
2018-12-15 · Scribd es el sitio social de lectura y editoriales más grande del mundo.
enhancement to depletion | Hackaday.io
Depletion MOSFETs are not as useful as enhancement ones, but there are a few appliions where they are super handy. One is a voltage follower with zero or negative voltage drop. With just two components (mosfet + potentiometer), one can make a very simple knob power adjustment, that has almost zero dropout at max, and infinite input resistance.
Silicon - Newikis
Silicon is a chemical element with the syol Si and atomic nuer 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and semiconductor.It is a meer of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not
Past Events - STMicroelectronics
Silicon Carbide power devices for electric vehicles webinar: Online Online Event. 24 Sep - 09 Dec Silicon Carbide MOSFETs and Rectifiers – Revolutionizing Power Electronics webinar: Online. 17 Jan - 17 Jan Russia. 25 Jan - 17 Jun : RFID / NFC MOOC with hands-on exercises: EMEA. 13 Jan - 15 Jan :
My ST Registration - STMicroelectronics
Silicon Carbide Diodes Ultrafast Rectifiers 200V to 400V Ultrafast Rectifiers Power MOSFETs STPOWER N-channel MOSFETs > 30 V to 350 V STPOWER N-channel MOSFETs > 350 V to 700 V
Yutong to deliver its first electric bus in China to use
9 June 2020 Chinese commercial vehicle manufacturer Zhengzhou Yutong Group Co Ltd (which specializing in electric buses) is using 1200V silicon carbide devices from Cree Inc of Durham, NC, USA in a power module made by StarPower Semiconductor for its new high-efficiency electric bus powertrain system. Use of SiC-based power solutions enables faster, smaller, lighter […]
SiC power Schottky and PiN diodes_
2012-4-4 · SiC power Schottky and PiN diodes___ 222|23 SiC power Schottky and PiN diodes___。IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, APRIL 2002 665 SiC
1200V Silicon IGBT vs SiC MOSFET Comparison 2018 …
/EIN News/ -- Dublin, Nov. 05, 2018 (GLOBE NEWSWIRE) -- The "1200V Silicon IGBT vs SiC MOSFET Comparison 2018 Complete Teardown Report" report has been added to …
Why Silicon Carbide ? | Resilient Technology Blog
2010-10-15 · One of the first electronic materials, silicon carbide (SiC) is actually best known as an abrasive and the the majority of the worlds production is used as the black sandpaper you can buy in B&Q (or Home Depot for people in the states). Originally discovered in Sweden in …
Radiation hardening - Wikipedia
2020-8-9 · Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
New power modules with CoolSiC MOSFETs for EV …
2020-5-30 · With the increasing nuers of electric vehicles, the demand for energy efficient charging solutions is also rising. Addressing the fast growing demand for Silicon Carbide (SiC) solutions in this field, Infineon Technologies launched two new EasyPACK modules of the 1200 V family. Both, Easy 1B and Easy 2B, integrate CoolSiC MOSFETs aiming not only at this market but also
White Paper - Avago SiC MOSFET Gate Drive Optoc
Silicon Carbide (SiC) power semiconductors are rapidly emerging into the commercial market delivering several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can improve overall system efficiency by more than 10% and the higher switching capability can reduce the overall system size and costs.
C2M0080170P Wolfspeed / Cree | Mouser Российская
Wolfspeed C2M™ SiC Power MOSFETs Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses.
Appliions - Photovoltaic Solutions | Microsemi
Microsemi offers variety of solutions for the photovoltaic (PV) market, supporting appliions in power harvesting, power management, power switching & monitoring.
Dr Stephen Thomas - University of Warwick
Fabriion and electrical characterisation of silicon-carbide MOSFETs . Previous Research Positions. Research Fellow, March 2011-June 2011, Department of Physics, University of Warwick. Previous Teaching. First year electronics workshop. Department of Physics, University of Warwick. Second year electronics workshop. Department of Physics
Microchip Expands Silicon Carbide (SiC) Family of …
BANGKOK, March 17, 2020 /PRNewswire/ -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to create innovative power solutions. Appliions leveraging SiC technology range from electric vehicles and charging stations to smart power grids and industrial and aircraft power systems.
IEEE Transactions on Power Electronics, • , - X-MOL
A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, coining the silicon (Si) insulated-gate bipolar transistor (IGBT) and silicon carbide Schottky barrier diodes (SBDs) chips.
2019-6-25 · Silicon Carbide (SiC) Devices and Power Modules: Includes SiC MOSFETs, Schottky Barrier Diodes (SBDs) and power modules ideal for appliions above 600 V. Diode and Rectifier Devices: Includes standard, fast and ultra-fast, and Schottky rectifiers and rectifier modules, and an AECQ101-qualified Fred (DQ) family.
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The …
The fabriion of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices. For the n -type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and different models were proposed to explain the Schottky to
Top Semiconductor Companies | 50 Semiconductor …
What is a Semiconductor? A Semiconductor can be defined as a material that has the characteristics and ability to conduct a small amount of electrical current in a controlled manner. Semiconductors have much lower resistance to the flow of electrical current in one direction than in another. Diodes, transistors, and many photovoltaic cells contain semiconductive material.